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| AP40T03S/P Advanced Power Electronics Corp. Simple Drive Requirement Low Gate Charge Fast Switching G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 25m 28A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40T03P) are available for low-profile applications. G D GD S TO-263 TO-220 S Units V V A A A W W/ Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=100 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 25 25 28 24 95 31.25 0.25 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.0 62 Unit /W /W Data and specifications subject to change without notice 200127031 AP40T03S/P Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 25 1 - Typ. 0.032 Max. Units 25 45 3 1 25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance VGS=10V, ID=18A VGS=4.5V, ID=14A VDS=VGS, ID=250uA VDS=10V, ID=18A 15 8.8 2.5 5.8 6 62 16 4.4 655 145 95 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=25V, VGS=0V VDS=20V ,VGS=0V VGS= 25V ID=18A VDS=20V VGS=4.5V VDS=15V ID=18A RG=3.3,VGS=10V RD=0.83 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 28 95 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25, IS=28A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP40T03S/P 90 75 T C =25 o C 10V 8.0V T C =150 o C 10V 8.0V ID , Drain Current (A) 60 ID , Drain Current (A) 50 6.0V 6.0V 30 25 V GS =4.0V V GS =4.0V 0 0.0 1.5 3.0 4.5 0 0.0 1.5 3.0 4.5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 2 I D =18A T C =25 I D =18A V GS =10V 30 Normalized R DS(ON) 1 5 9 13 17 50 1.4 RDS(ON) (m ) 0.8 10 0.2 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP40T03S/P 36 40 27 30 ID , Drain Current (A) 18 PD (W) 25 50 75 100 125 150 20 9 10 0 0 0 50 100 150 T c , Case Temperature ( o C) T c , Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 1000 1 Duty Factor = 0.5 Normalized Thermal Response (R thjc) 0.2 100 0.1 ID (A) 100us 0.1 0.05 PDM 0.02 t T Single Pulse 10 0.01 1ms T C =25 o C Single Pulse 1 0.1 1 10 100 Duty Factor = t/T Peak Tj = P DM x Rthjc + TC 10ms 100ms DC V DS (V) 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP40T03S/P 12 f=1.0MHz 10000 I D =18A VGS , Gate to Source Voltage (V) 9 V DS =10V V DS =15V V DS =20V 6 1000 Ciss C (pF) 100 3 Coss Crss 0 0 3 6 9 12 10 1 8 15 22 29 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 2.5 2 10 Tj=150 o C Tj=25 o C VGS(th) (V) 1 0.1 0 0.4 0.8 1.2 1.6 IS(A) 1.5 1 0.5 -50 0 50 100 150 V SD (V) T j , Junction Temperature ( C ) o Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP40T03S/P VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.6 x RATED VDS RG G + 10 v - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 4.5V D 0.8 x RATED VDS G S + QGS QGD VGS 1~ 3 mA IG I D Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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